EPR in Semiconductors

Spin-Hamiltonian parameter database for EPR centers in semiconductors

Help top | Policy | How to prepare *.inp file | Command lines | Author's comment lines | S and I | SH parameter matrices | Rotation matrices | Angular parameters | Transition tables | Parameter output(*.out file) | Graph output(*.plt file) | S=1/2 | S=1/2, I=1/2 | S=1

S=1/2, I=1/2 case:
Si/V2_G6/G6si.inp 

ROADMAP, EPRFD, ECHO, PRTPROPAR, EULER, PLOT=1,
FREQ=9452.0, AUTONUC, NN=1, NSITE=12

Label:G6(Six2)
Author:T. Umeda
Reference:J.W. Corbett, G.D. Watkins, Phys. Rev. Lett. 7, 314 (1961);G.D. Watkins, J.W. Corbett, Phys. Rev. 138, A543 (1965).
Origin:V2(+)
Sample:low-resistivity p-Si irradiated by 1.5-MeV electrons.
Symmetry:Monoclinic-I
Temperature:20K
Coordinate:x=[100],y=[011],z=[0-11]
RelativeIntensity:0.0934
OtherRemarks:Generation rate=0.008defects/cm3 per electron/cm2, strongly temperature-dependent.
gx:2.00410
gy:2.00200
gz:2.00040
version:4
date:2004/12/02 20:48:13
Ax:72.53
Ay:42.79
Az:42.79

0.5
si29

2.0041	2.0004	2.0020
-62.4	0	0

72.53	42.79	42.79
-55	0	0

1, 1

1	0	0
0	1	0
0	0	1

-1	0	0
0	0	-1
0	-1	0

1	0	0
0	-1	0
0	0	-1

-1	0	0
0	0	1
0	1	0

0		-0.707107	0.707107
0.707107	-0.5		-0.5
0.707107	0.5		0.5

0		0.707107	-0.707107
-0.707107	-0.5		-0.5
-0.707107	0.5		0.5

0		-0.707107	0.707107
-0.707107	0.5		0.5
-0.707107	-0.5		-0.5

0		0.707107	-0.707107
0.707107	0.5		0.5
0.707107	-0.5		-0.5

0		0.707107	0.707107
-0.707107	-0.5		0.5
0.707107	-0.5		0.5

0		-0.707107	-0.707107
0.707107	-0.5		0.5
-0.707107	-0.5		0.5

0		-0.707107	-0.707107
-0.707107	0.5		-0.5
0.707107	0.5		-0.5

0		0.707107	0.707107
0.707107	0.5		-0.5
-0.707107	0.5		-0.5


0.0,	0.0,	90.0,	0.0
0.0,	90.0,	2.0

2
2,	3
1,	4

2
2,	3
1,	4

2
2,	3
1,	4

2
2,	3
1,	4

2
2,	3
1,	4

2
2,	3
1,	4

2
2,	3
1,	4

2
2,	3
1,	4

2
2,	3
1,	4

2
2,	3
1,	4

2
2,	3
1,	4

2
2,	3
1,	4