|
EPR in
Semiconductors Spin-Hamiltonian parameter database for EPR centers in semiconductors |
|
Help top | Policy | How to prepare *.inp file | Command lines | Author's comment lines | S and I | SH parameter matrices | Rotation matrices | Angular parameters | Transition tables | Parameter output(*.out file) | Graph output(*.plt file) | S=1/2 | S=1/2, I=1/2 | S=1 |
ROADMAP, EPRFD, ECHO, PRTPROPAR, EULER, PLOT=1, FREQ=9452.0, AUTONUC, NN=0, NSITE=12 Label:G6(g) Author:T. Umeda Reference:J.W. Corbett, G.D. Watkins, Phys. Rev. Lett. 7, 314 (1961);G.D. Watkins, J.W. Corbett, Phys. Rev. 138, A543 (1965). Origin:V2(+) Sample:low-resistivity p-Si irradiated by 1.5-MeV electrons. Symmetry:Monoclinic-I Temperature:20K Coordinate:x=[100],y=[011],z=[0-11] RelativeIntensity:1 OtherRemarks:Generation rate=0.008defects/cm3 per electron/cm2, strongly temperature-dependent. gx:2.00410 gy:2.00200 gz:2.00040 version:5 date:2004/12/02 20:49:56 0.5 2.0041 2.0004 2.0020 -62.4 0 0 1 1 0 0 0 1 0 0 0 1 -1 0 0 0 0 -1 0 -1 0 1 0 0 0 -1 0 0 0 -1 -1 0 0 0 0 1 0 1 0 0 -0.707107 0.707107 0.707107 -0.5 -0.5 0.707107 0.5 0.5 0 0.707107 -0.707107 -0.707107 -0.5 -0.5 -0.707107 0.5 0.5 0 -0.707107 0.707107 -0.707107 0.5 0.5 -0.707107 -0.5 -0.5 0 0.707107 -0.707107 0.707107 0.5 0.5 0.707107 -0.5 -0.5 0 0.707107 0.707107 -0.707107 -0.5 0.5 0.707107 -0.5 0.5 0 -0.707107 -0.707107 0.707107 -0.5 0.5 -0.707107 -0.5 0.5 0 -0.707107 -0.707107 -0.707107 0.5 -0.5 0.707107 0.5 -0.5 0 0.707107 0.707107 0.707107 0.5 -0.5 -0.707107 0.5 -0.5 0.0, 0.0, 90.0, 0.0 0.0, 90.0, 2.0 1 1, 2 1 1, 2 1 1, 2 1 1, 2 1 1, 2 1 1, 2 1 1, 2 1 1, 2 1 1, 2 1 1, 2 1 1, 2 1 1, 2